SIGC156T60SNR2C |
Part Number | SIGC156T60SNR2C |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given . |
Features |
• 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling SIGC156T60SNR2C This chip is used for: • IGBT-Modules Applications: • drives C G E Chip Type VCE ICn Die Size SIGC156T60SNR2C 600V 200A 12.5 x 12.5 mm2 Package Ordering Code sawn on foil Q67050-A4154A003 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Stor. |
Datasheet |
SIGC156T60SNR2C Data Sheet
PDF 65.23KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SIGC156T60NR2C |
Infineon Technologies |
IGBT | |
2 | SIGC156T120R2C |
Infineon Technologies |
IGBT | |
3 | SIGC156T120R2CL |
Infineon Technologies |
IGBT | |
4 | SIGC156T120R2CQ |
Infineon Technologies |
IGBT | |
5 | SIGC156T120R2CS |
Infineon Technologies |
IGBT | |
6 | SIGC158T120R3 |
Infineon Technologies |
IGBT | |
7 | SIGC158T120R3E |
Infineon |
IGBT | |
8 | SIGC158T120R3L |
Infineon Technologies |
IGBT | |
9 | SIGC158T120R3LE |
Infineon |
IGBT | |
10 | SIGC158T170R3 |
Infineon Technologies |
IGBT |