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SIGC158T170R3E IGBT

Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.1 2.2 Subjects (major changes since last revision) Change wafer size to 200 mm Additional basic types L7801M, L7801T, L7801E Published by Infi...
Features
 1700V Trench & Field Stop technology
 low turn-off losses
 short tail current
 positive temperature coefficient
 easy paralleling This chip is used for:
 power modules Applications:
 drives Chip Type VCE IC Die Size SIGC158T170R3E 1700V 125A 12.57 x 12.57 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thi...

SIGC158T170R3E
Datasheet SIGC158T170R3E Infineon DataSheet
PDF 161.63KB


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