AOB11N60 |
Part Number | AOB11N60 |
Manufacturer | Alpha & Omega Semiconductors |
Description | The AOB11N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(o... |
Features |
C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC
Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink Maximum Junction-to-Case
A
Rev 0: Jan 2012
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Free Datasheet http://www.datasheet4u.com/
AOB11N60
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /... |
Document |
AOB11N60 Data Sheet
PDF 465.21KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AOB11N60 |
INCHANGE |
N-Channel MOSFET | |
2 | AOB1100L |
INCHANGE |
N-Channel MOSFET | |
3 | AOB1100L |
Freescale |
100V N-Channel Rugged Planar MOSFET | |
4 | AOB1100L |
Alpha & Omega Semiconductors |
100V N-Channel Rugged Planar MOSFET | |
5 | AOB11C60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET | |
6 | AOB11S60 |
Alpha & Omega Semiconductors |
Power Transistor |