NDS9953A |
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| Part Number | NDS9953A |
| Manufacturer | Fairchild |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
| Features |
-2.9A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
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5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A= 25°C unless otherwise noted
NDS9953A -30 ± 20
(Note 1a)
Units V V A
± 2.9 ± 10 2
Power Dissipation for Dual Operation Power Dissipation ... |
| Datasheet |
 NDS9953A Data Sheet
PDF 342.69KB |
| Distributor | Stock | Price | Buy |
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