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NDS9933A |
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| Part Number | NDS9933A |
| Manufacturer | Fairchild |
| Description | This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mi... |
| Features |
• -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V RDS(on) = 0.19 Ω @ VGS = -2.7 V RDS(on) = 0.20 Ω @ VGS = -2.5 V. • High density cell design for extremely low RDS(on). • High power and current handling capability in a widely used surface mount package. • Dual MOSFET in surface mount package. D2 D1 D1 D2 5 6 4 3 2 1 G1 SO-8 S1 G1 S2 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter NDS9933A -20 (Note 1a) Units V V A W ±8 -2.8 -10 2 Power Dissipation for Dual Ope... |
| Document |
 NDS9933A Data Sheet
PDF 191.77KB |
| Distributor | Stock | Price | Buy |
|---|
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Desde 2024. D4U Semiconductor.
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