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NDS9956A |
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| Part Number | NDS9956A |
| Manufacturer | Fairchild |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices ar. |
| Features | 3.7A, 30V. RDS(ON) = 0.08Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A= 25°C unless otherwise noted NDS9956A 30 ± 20 (Note 1a) Units V V A ± 3.7 ± 15 2 Power Dissipation for Dual Operation Power Dissipation for Si. |
| Datasheet |
 NDS9956A Data Sheet
PDF 341.13KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDS9952A |
Fairchild |
Dual N&P-Channel MOSFET |
|
| 2 | NDS9953A |
Fairchild |
Dual P-Channel MOSFET |
|
| 3 | NDS9955 |
Fairchild |
Dual N-Channel MOSFET |
|
| 4 | NDS9957 |
Fairchild |
Dual N-Channel MOSFET |
|
| 5 | NDS9958 |
Fairchild |
Dual N&P-Channel MOSFET |
|
| 6 | NDS9959 |
Fairchild |
Dual N-Channel MOSFET |
|
| 7 | NDS9959-NL |
VBsemi |
Dual N-Channel MOSFET |
|
| 8 | NDS9925A |
Fairchild |
Dual N-Channel MOSFET |
|
| 9 | NDS9933A |
Fairchild |
Dual P-Channel MOSFET |
|
| 10 | NDS9936 |
Fairchild |
Dual N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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