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NDS9957 |
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| Part Number | NDS9957 |
| Manufacturer | Fairchild |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
| Features |
2.6A, 60V. RDS(ON) = 0.16Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
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5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A = 25°C unless otherwise noted
NDS9957 60 ± 20
(Note 1a)
Units V V A
± 2.6 ± 10 2
Power Dissipation for Dual Operation Power Dissipation for Si... |
| Document |
 NDS9957 Data Sheet
PDF 340.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDS9952A |
Fairchild |
Dual N&P-Channel MOSFET |
|
| 2 | NDS9953A |
Fairchild |
Dual P-Channel MOSFET |
|
| 3 | NDS9955 |
Fairchild |
Dual N-Channel MOSFET |
|
| 4 | NDS9956A |
Fairchild |
Dual N-Channel MOSFET |
|
| 5 | NDS9958 |
Fairchild |
Dual N&P-Channel MOSFET |
|
| 6 | NDS9959 |
Fairchild |
Dual N-Channel MOSFET |
|
| 7 | NDS9959-NL |
VBsemi |
Dual N-Channel MOSFET |
|
| 8 | NDS9925A |
Fairchild |
Dual N-Channel MOSFET |
|
| 9 | NDS9933A |
Fairchild |
Dual P-Channel MOSFET |
|
| 10 | NDS9936 |
Fairchild |
Dual N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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