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NDS9925A |
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| Part Number | NDS9925A |
| Manufacturer | Fairchild |
| Description | SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
| Features |
4.5 A, 20 V. RDS(ON) = 0.060 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM -6
SuperSOTTM -8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
S ND 5A 2 99
S2 G2
5 6 7 8
4 3 2 1
SO-8
pin 1
S1
G1
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
NDS9925A
Units
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
(Note 1a)
20 ±8 4.5 15 2
(No... |
| Document |
 NDS9925A Data Sheet
PDF 194.62KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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| 2 | NDS9936 |
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| 3 | NDS9945 |
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| 4 | NDS9947 |
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| 5 | NDS9948 |
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| 6 | NDS9948 |
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| 7 | NDS9952A |
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| 8 | NDS9953A |
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| 9 | NDS9955 |
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| 10 | NDS9956A |
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Desde 2024. D4U Semiconductor.
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