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NDS9955 |
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| Part Number | NDS9955 |
| Manufacturer | Fairchild |
| Description | SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
| Features |
3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V, RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
5 6 G2 7 8
4 3 2 1
S ND 55 99
S2 G1
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25oC unless other wise noted NDS9955 50 ±20
(Note 1a)
Units V V A
3 10 2
Po... |
| Document |
 NDS9955 Data Sheet
PDF 196.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDS9952A |
Fairchild |
Dual N&P-Channel MOSFET |
|
| 2 | NDS9953A |
Fairchild |
Dual P-Channel MOSFET |
|
| 3 | NDS9956A |
Fairchild |
Dual N-Channel MOSFET |
|
| 4 | NDS9957 |
Fairchild |
Dual N-Channel MOSFET |
|
| 5 | NDS9958 |
Fairchild |
Dual N&P-Channel MOSFET |
|
| 6 | NDS9959 |
Fairchild |
Dual N-Channel MOSFET |
|
| 7 | NDS9959-NL |
VBsemi |
Dual N-Channel MOSFET |
|
| 8 | NDS9925A |
Fairchild |
Dual N-Channel MOSFET |
|
| 9 | NDS9933A |
Fairchild |
Dual P-Channel MOSFET |
|
| 10 | NDS9936 |
Fairchild |
Dual N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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