SI2306DS |
Part Number | SI2306DS |
Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
Description | Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 3.5 2.8 rDS(on) (W) 0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tes... |
Features |
ID (A)
3.5 2.8
rDS(on) (W)
0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 100% Rg Tested
-
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg... |
Document |
SI2306DS Data Sheet
PDF 57.93KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | Si2306 |
SiPU |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | SI2306 |
MCC |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | SI2306 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
4 | SI2306 |
JinYu |
20V N-Channel Enhancement Mode MOSFET | |
5 | Si2306BDS |
Vishay |
N-Channel 30-V (D-S) MOSFET | |
6 | SI2300 |
Kexin |
N-Channel MOSFET |