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GAN041-650WSB |
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| Part Number | GAN041-650WSB |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silic... |
| Features |
• Ultra-low reverse recovery charge • Simple gate drive (0 V to +10 V or 12 V) • Robust gate oxide (±20 V capability) • High gate threshold voltage (+4 V) for very good gate bounce immunity • Very low source-drain voltage in reverse conduction mode • Transient over-voltage capability 3. Applications • Hard and soft switching converters for industrial and datacom power • Bridgeless totempole PFC • PV and UPS inverters • Servo motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj ... |
| Document |
 GAN041-650WSB Data Sheet
PDF 310.87KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GAN039-650NBB |
nexperia |
Gallium Nitride (GaN) FET |
|
| 2 | GAN039-650NBBA |
nexperia |
GaN FET |
|
| 3 | GAN039-650NTB |
nexperia |
Gallium Nitride (GaN) FET |
|
| 4 | GAN063-650WSA |
nexperia |
GaN FET |
|
| 5 | GAN080-650EBE |
nexperia |
GaN FET |
|
| 6 | GAN111-650WSB |
nexperia |
Gallium Nitride (GaN) FET |
|
Desde 2024. D4U Semiconductor.
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