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GAN039-650NBB Gallium Nitride (GaN) FET Datasheet


GAN039-650NBB

nexperia
GAN039-650NBB
Part Number GAN039-650NBB
Manufacturer nexperia (https://www.nexperia.com/)
Title GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
Description The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest ...
Features and benefits
• Simplified driver design as standard level MOSFET gate drivers can be used:
• 0 V to 12 V drive voltage
• Gate threshold voltage VGSth of 4 V
• Robust gate oxide with ±20 V VGS rating
• High gate threshold voltage of 4 V for gate bounce immunity
• Low body diode Vf for reduced losses ...

Document Datasheet GAN039-650NBB datasheet pdf (521.26KB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 0 In Stock
Price
1 units: 16.46 USD
10 units: 14.51 USD
50 units: 14.08 USD
100 units: 12.55 USD
250 units: 12.53 USD
500 units: 11.37 USD
1000 units: 10.42 USD
BuyNow (No Longer Stocked Nexperia GAN039-650NBBHP)



GAN039-650NBBA

nexperia
GAN039-650NBBA
Part Number GAN039-650NBBA
Manufacturer nexperia
Title GaN FET
Description The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that comb.
Features and benefits
• Fully automotive qualified to AEC-Q101:
• 175 °C rating suitable for thermally demanding environments
• Simplified driver design as standard level MOSFET gate drivers can be used:
• 0 V to 12 V drive voltage
• Gate threshold voltage VGSth of 4 V
• Robust gate oxide with ±20 V VGS rati.

Document GAN039-650NBBA datasheet pdf



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