GAN039-650NTB Gallium Nitride (GaN) FET Datasheet


Part Number GAN039-650NTB
Manufacturer nexperia (https://www.nexperia.com/)
Title GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
Description The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia...
Features and benefits
• Simplified driver design as standard level MOSFET gate drivers can be used:
• 0 V to 12 V drive voltage
• Gate threshold voltage VGSth of 4 V
• Robust gate oxide with ±20 V VGS rating
• High gate threshold voltage of 4 V for gate bounce immunity
• Low body diode Vf for reduced losses ...

Document Datasheet GAN039-650NTB datasheet pdf (476.31KB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 0 In Stock
1 units: 11.9 USD
10 units: 10.48 USD
50 units: 10.17 USD
100 units: 9.07 USD
500 units: 8.22 USD
1000 units: 7.53 USD
BuyNow (No Longer Stocked Nexperia GAN039-650NTBZ)

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