C5419 |
Part Number | C5419 |
Manufacturer | Panasonic |
Description | Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification 6.9±0.1 0.7 4.0 Unit: mm 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 ■ Features • High collector-... |
Features |
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.65 max. (1.0) 14.5±0.5 • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter voltage (Base open) VCEO 300 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 7 V sta tinu Collector current IC 70 mA a e cle con Peak collector current lifecy d, dis Collector power dissipation * ICP 100 mA PC 1 W n u duct type Junction temperature Tj 150 °C te tin ... |
Document |
C5419 Data Sheet
PDF 218.10KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | C5411 |
Toshiba Semiconductor |
2SC5411 | |
2 | C5413 |
Panasonic |
Power Transistors | |
3 | C5416 |
Sanyo |
2SC5416 | |
4 | C5417 |
Sanken electric |
2SC5417 | |
5 | C5418 |
Panasonic Semiconductor |
2SC5418 | |
6 | C5404 |
Toshiba Semiconductor |
2SC5404 | |
7 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
8 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
9 | C5407 |
Panasonic |
2SC5407 | |
10 | C5420 |
Sanyo |
2SC5420 |