Description | Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 3.0±0.3 s Features φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switch... |
Features | φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.4 22.0±0.5 q Wide area of safe operation (ASO) 5° 5° 4.0 / s Absolute Maximum Ratings (TC=25˚C) 2.0±0.2 5° 1.1±0.1 e ) Parameter Symbol Ratings Unit 2.0 18.6±0.5 c type Collector to base voltage VCBO 1700 V n d stag... |
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No. | Part # | Manufacture | Description | Datasheet |
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![]() Toshiba Semiconductor |
2SC5411 |
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![]() Panasonic |
Power Transistors |
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![]() Sanyo |
2SC5416 |
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![]() Sanken electric |
2SC5417 |
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![]() Panasonic |
Silicon NPN Transistor |
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![]() Toshiba Semiconductor |
2SC5404 |
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![]() Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
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![]() Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
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![]() Panasonic |
2SC5407 |
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![]() Sanyo |
2SC5420 |
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Desde 2024. D4U Semiconductor.
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