| Description | Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 3.0±0.3 s Features φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switch... |
| Features | φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.4 22.0±0.5 q Wide area of safe operation (ASO) 5° 5° 4.0 / s Absolute Maximum Ratings (TC=25˚C) 2.0±0.2 5° 1.1±0.1 e ) Parameter Symbol Ratings Unit 2.0 18.6±0.5 c type Collector to base voltage VCBO 1700 V n d stag... |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
2SC5411 |
|
|
|
|
Panasonic |
Power Transistors |
|
|
|
|
Sanyo |
2SC5416 |
|
|
|
|
Sanken electric |
2SC5417 |
|
|
|
|
Panasonic |
Silicon NPN Transistor |
|
|
|
|
Toshiba Semiconductor |
2SC5404 |
|
|
|
|
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
|
|
|
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
|
|
|
Panasonic |
2SC5407 |
|
|
|
|
Sanyo |
2SC5420 |
|
Desde 2024. D4U Semiconductor.
|
Contáctenos
|
Política de Privacidad
