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C5418 |
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| Part Number | C5418 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 3.0±0.3 s Features φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown volt... |
| Features |
φ3.2±0.1
2.0 1.2 10.0 26.5±0.5
4.5
q High breakdown voltage, and high reliability through the use of a
5°
5°
glass passivation layer
q High-speed switching
23.4 22.0±0.5
q Wide area of safe operation (ASO)
5° 5°
4.0
/ s Absolute Maximum Ratings (TC=25˚C)
2.0±0.2
5°
1.1±0.1
e ) Parameter
Symbol
Ratings
Unit
2.0 18.6±0.5
c type Collector to base voltage
VCBO
1700
V
n d stage. tinued Collector to emitter voltage
VCES
3.3±0.3
0.7±0.1
1700
V
le n VCEO
600
V
a elifecyc disco Emitter to base voltage
VEBO
2.0 5.5±0.3
5
V
n u t ed, Peak collector current
ICP
30... |
| Document |
 C5418 Data Sheet
PDF 184.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C5411 |
Toshiba Semiconductor |
2SC5411 |
|
| 2 | C5413 |
Panasonic |
Power Transistors |
|
| 3 | C5416 |
Sanyo |
2SC5416 |
|
| 4 | C5417 |
Sanken electric |
2SC5417 |
|
| 5 | C5419 |
Panasonic |
Silicon NPN Transistor |
|
| 6 | C5404 |
Toshiba Semiconductor |
2SC5404 |
|
| 7 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
| 8 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
| 9 | C5407 |
Panasonic |
2SC5407 |
|
| 10 | C5420 |
Sanyo |
2SC5420 |
|
Desde 2024. D4U Semiconductor.
|