Description | PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttie Power Transistors 2SC5413 Silicon NPN triple diffusion mesa type 20.0±0.5Produ... |
Features | q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25... |
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No. | Part # | Manufacture | Description | Datasheet |
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![]() Toshiba Semiconductor |
2SC5411 |
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![]() Sanyo |
2SC5416 |
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![]() Sanken electric |
2SC5417 |
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![]() Panasonic Semiconductor |
2SC5418 |
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![]() Panasonic |
Silicon NPN Transistor |
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![]() Toshiba Semiconductor |
2SC5404 |
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![]() Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
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![]() Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
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![]() Panasonic |
2SC5407 |
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![]() Sanyo |
2SC5420 |
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Desde 2024. D4U Semiconductor.
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