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C5411 2SC5411 Datasheet


C5411

Toshiba Semiconductor
C5411
Part Number C5411
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title ARM Microcontrollers - MCU Low Power 32-bit Microcontroller based on ARM® Cortex®-M4
Description 2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 3 V (Max.) l High Speed : tf = 0.15 µs (...
Features tter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.75 A IC = 11 A, IB = 2.75 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8.5 A, IB1 (end) = 1.6 A fH = 64 kHz MIN TYP. MAX UNIT ―― 1 mA ― ― 10 µA 600 ― ― V 10 ― 40 4―8 ―― 3 V ― 1.0 1.5 V ― 2 ― MHz ― 190 ― pF ― 2.5 3.5 ― 0.15 0.3 µs 1 2001-08-20 2SC5411 2 2001-0...

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Stock 13796 In Stock
Price
1 units: 6.08 USD
10 units: 5.27 USD
100 units: 4.63 USD
250 units: 4.07 USD
480 units: 4.05 USD
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Panasonic
C5419
Part Number C5419
Manufacturer Panasonic
Title Silicon NPN Transistor
Description Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification 6.9±0.1 0.7 4.0 Unit: mm 2.5±0.1 (0.8) (0..
Features
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT 0.65 max. (1.0) 14.5±0.5
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter.

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Panasonic Semiconductor
C5418
Part Number C5418
Manufacturer Panasonic Semiconductor
Title 2SC5418
Description Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 3.0±0.3 s Features φ3.2±.
Features φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.4 22.0±0.5 q Wide area of safe operation (ASO) 5° 5° 4.0 / s Absolute Maximum Ratings (TC=25˚C) 2.0±0.2 5° 1.1±0.1 e ) Param.

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Sanken electric
C5417
Part Number C5417
Manufacturer Sanken electric
Title 2SC5417
Description 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Pu.
Features 0.2 -0.1 2.54 0.45 +0.2 -0.1 2.2±0.2 2.4±0.2 Weight : Approx 2.0g BCE a. Type No. b. Lot No. Collector-Emitter Saturation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V) Collector Current IC(A) I C
  – V CE Characteristics (Typical) 3 400mA 300mA 200mA 150mA 2 100mA 1 I.

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Sanyo
C5416
Part Number C5416
Manufacturer Sanyo
Title 2SC5416
Description Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features • High breakdown voltage..
Features
• High breakdown voltage.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process. Package Dimensions unit: mm 2079B-TO220FI (LS) [2SC5416] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol .

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Panasonic
C5413
Part Number C5413
Manufacturer Panasonic
Title Power Transistors
Description PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnec.
Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage .

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