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C5411

Toshiba Semiconductor
C5411
Part Number C5411
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title 2SC5411
Description 2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH ...
Features tter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 A IC = 11 A, ...

Datasheet C5411 pdf datasheet - 228.23KB



C5419

Panasonic
C5419
Part Number C5419
Manufacturer Panasonic
Title Silicon NPN Transistor
Description Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification 6.9±0.1 0.7 4.0 Unit: mm 2.5±0.1 (0.8) (0..
Features
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT 0.65 max. (1.0) 14.5±0.5
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter.

Datasheet C5419 pdf datasheet




C5418

Panasonic Semiconductor
C5418
Part Number C5418
Manufacturer Panasonic Semiconductor
Title 2SC5418
Description Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 3.0±0.3 s Features φ3.2±.
Features φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.4 22.0±0.5 q Wide area of safe operation (ASO) 5° 5° 4.0 / s Absolute Maximum Ratings (TC=25˚C) 2.0±0.2 5° 1.1±0.1 e ) Param.

Datasheet C5418 pdf datasheet




C5417

Sanken electric
C5417
Part Number C5417
Manufacturer Sanken electric
Title 2SC5417
Description 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Pu.
Features 0.2 -0.1 2.54 0.45 +0.2 -0.1 2.2±0.2 2.4±0.2 Weight : Approx 2.0g BCE a. Type No. b. Lot No. Collector-Emitter Saturation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V) Collector Current IC(A) I C
  – V CE Characteristics (Typical) 3 400mA 300mA 200mA 150mA 2 100mA 1 I.

Datasheet C5417 pdf datasheet




C5416

Sanyo
C5416
Part Number C5416
Manufacturer Sanyo
Title 2SC5416
Description Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features • High breakdown voltage..
Features
• High breakdown voltage.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process. Package Dimensions unit: mm 2079B-TO220FI (LS) [2SC5416] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol .

Datasheet C5416 pdf datasheet




C5413

Panasonic
C5413
Part Number C5413
Manufacturer Panasonic
Title Power Transistors
Description PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnec.
Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage .

Datasheet C5413 pdf datasheet





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