BF201M |
Part Number | BF201M |
Manufacturer | LangTuo |
Description | LangTuo GDT Product Specification BF***M SMD Gas Discharge Tube(5×5×4.2mm) 1、FEATURES Surface Mounting Design UL Certificated E232249 Size Design EIA 2018 5×5×4.2mm High Current Handling Capa... |
Features |
Surface Mounting Design UL Certificated E232249 Size Design EIA 2018 5×5×4.2mm High Current Handling Capability 5,000A @ 8/20μs Low Capacitance and Insertion Loss Fast Response and Long Service Life Reliable to Protect Electrostatic Surge Moisture sensitivity level:Level 1
WI-SP-MG-09-B2
2、AVAILABLE PART NUMBER AND ELECTRICAL PARAMETER
Part Number
DC Breakdown Tolerance
Voltage①
Impulse Spark-over
Voltage
Impulse Discharge Current②
100V/s④
of Vs
1kV/μs④
8/20μs
BF071M
70V
±20%
≤ 650V
5,000A
BF091M
90V
±20%
≤650V
5,000A
BF151M
150V
±20%
≤ 650V
5,000A
BF201... |
Document |
BF201M Data Sheet
PDF 228.49KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BF200 |
ETC |
NPN TRANZYSTORY | |
2 | BF200 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
3 | BF2000 |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode | |
4 | BF2000W |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode | |
5 | BF200B |
Bharat |
NPN High Frequency Transistors | |
6 | BF200B |
Advani |
IF / RF Amplifiers and Oscillators | |
7 | BF2030 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode | |
8 | BF2030 |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode | |
9 | BF2030R |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode | |
10 | BF2030W |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |