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BF2030R |
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| Part Number | BF2030R |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF2030... AG... |
| Features |
istance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W
Symbol Rthchs
BF2030...
Value
≤370 ≤280
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, ... |
| Document |
 BF2030R Data Sheet
PDF 113.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF2030 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
| 2 | BF2030 |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 3 | BF2030W |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
| 4 | BF2030W |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 5 | BF200 |
ETC |
NPN TRANZYSTORY |
|
| 6 | BF200 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
|
| 7 | BF2000 |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode |
|
| 8 | BF2000W |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode |
|
| 9 | BF200B |
Bharat |
NPN High Frequency Transistors |
|
| 10 | BF200B |
Advani |
IF / RF Amplifiers and Oscillators |
|
Desde 2024. D4U Semiconductor.
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