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BF2000W |
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| Part Number | BF2000W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 3 4 2 1 VPS05605 Type ... |
| Features |
1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage
±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source leakage current ±VG1S = 5 V, V G2S = V DS = 0 Gate 2 source leakage current ±VG2S = 5 V, V G1S = 0 V, V DS = 0 V Drain current
nA
I DSS VG1S(p) VG2S(p)
µA V
VDS = 5 V, V G1S = 0 , V G2S = 4 V Gate 1-source pinch-off voltage VDS = 5 V, V G2S = 4 V, I D = 200 µA
Gate 2-source pinch-off voltage
VDS = 5 V, ID = 100 µA
Semiconductor Group Semiconductor Group
22
Au 1998-11-01 -17-1998
BF 2000W
Electrical Characteristics... |
| Document |
 BF2000W Data Sheet
PDF 19.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF2000 |
Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode |
|
| 2 | BF200 |
ETC |
NPN TRANZYSTORY |
|
| 3 | BF200 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
|
| 4 | BF200B |
Bharat |
NPN High Frequency Transistors |
|
| 5 | BF200B |
Advani |
IF / RF Amplifiers and Oscillators |
|
| 6 | BF201M |
LangTuo |
SMD Gas Discharge Tube |
|
| 7 | BF2030 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
| 8 | BF2030 |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 9 | BF2030R |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 10 | BF2030W |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
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