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EMB07N03V |
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| Part Number | EMB07N03V |
| Manufacturer | Excelliance MOS |
| Title | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Features |
9/2
EMB07N03VL
LIMITS ±20 24 15 17 96 15 11.25 5.62 21 8.3 2.5 1
-55 to 150
UNIT V A
mJ W W °C
MAXIMUM 6 50
UNIT °C / W
p.1
EMB07N03VL
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt... |
| Document |
 EMB07N03V Data Sheet
PDF 864.37KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB07N03A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMB07N03HR |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMB07N03HS |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB07N03VQ |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMB07N04A |
Excelliance MOS |
MOSFET |
|
| 6 | EMB07N04H |
Excelliance MOS |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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