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P-Channel MOSFET z z z z z -30V/-5A,RDS(ON)= 36m@VGS=- 10V -30V/-4A,RDS(ON)= 53m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design D D D D Application z z z z |
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MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 3 W32* 12 W32= Device Code * = Month (A~Z) Marking Applications z Driver for Relay, Solen |
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Single P-Channel Power MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Powe |
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MOSFET (4) (3) (2) (1) SOP-8L DD 87 DD 65 12 SS 34 SG Pin configuration (Top view) Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Applications DC/DC converters Power supply conver |
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Single P-Channel Power MOSFET DFN2x2-6L D DS 6 54 D S 1 23 D DG Pin configuration (Top view) 6 54 Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package DFN2x2-6L Applications Dri |
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Single P-Channel Power MOSFET D S G SOT-723 D 3 12 GS Pin configuration (Top view) 3 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-723 Applications 1* 1 2 1 =Device |
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MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-563 WPMD2013 Http//:www.willsemi.com SOT-563 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 13* 1 23 |
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MOSFET Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOP-8L WPM3021 Http://www.sh-willsemi.com (4) (3) (2) (1) SOP-8L DD 87 DD 65 12 SS 34 SG Pin configuration (Top v |
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WillSEMI |
P-Channel Enhancement Mode Mosfet z Higher Efficiency Extending Battery Life z Miniature SOT23-3 Surface Mount Package z Super high density cell design for extremely low RDS (ON) 1 3 Applications zDC/DC Converter zLoad Switch zBattery Powered System zLCD Display inverter zPo |
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Single P-Channel Power MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 SOT-23 D 3 12 GS Pin configuration (Top view) 3 W26* 12 W26= Device Code * = Month (A~Z) |
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WillSEMI |
Power MOSFET and Schottky Diode z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Mo |
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Power MOSFET and Schottky Diode z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky DFN2*2 -6L Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Br |
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WillSEMI |
P-MOSFET z Max Rds(on) 42m @ Vgs=-4.5V z Max Vds -20V z Max Current -4.0A z Typical Vgs(th) -0.65V @ Id=-250uA z Power Dissipation 2.0W (Note2) z High performance Trench process z DFN3x3-8L Package z Pb-Free Applications z Battery charging z Load |
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WillSEMI |
Single P-Channel Power MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-523 Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Pow |
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WillSEMI |
Single P-Channel Power MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications Pin configuration (Top view) 6 54 2037 YYWW 12 3 2037 YY WW = Device |
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MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WPMD2012 Http//:www.willsemi.com SOT-363 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 12* 1 23 |
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MOSFET z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8L package design Applications z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Conver |
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MOSFET Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package DFN2X2-6L Applications DC/DC converters Power supply converters circuit Load/Power Switching for portable device |
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MOSFET V(BR)DSS −20 V RDS(on) Typ 75mΩ@ −4.5V 101mΩ@ −2.5V z Lower RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments z Bidirectional Cu |
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WillSEMI |
MOSFET SOT-23-3L D 3 12 GS Pin configuration (Top view) Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-23-3L Applications DC/DC converters Power supply converters c |
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Desde 2024. D4U Semiconductor.
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