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WPM2019 |
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| Part Number | WPM2019 |
| Manufacturer | WillSEMI |
| Description | SOT-523 The WPM2019 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for ... |
| Features |
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-523
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
D 3
12 GS
Pin configuration (Top view)
3
P9*
12
P9 =Device Code * = Month(A~Z)
Marking
Order information
Device
Package
Shipping
WPM2019-3/TR SOT-523 3000/Reel&Tape
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.4 Absolute Maximum ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dra... |
| Document |
 WPM2019 Data Sheet
PDF 622.70KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WPM2014 |
WillSEMI |
Single P-Channel Power MOSFET |
|
| 2 | WPM2015 |
Kexin |
P-Channel MOSFET |
|
| 3 | WPM2015 |
WillSEMI |
Single P-Channel Power MOSFET |
|
| 4 | WPM2005 |
WillSEMI |
Power MOSFET and Schottky Diode |
|
| 5 | WPM2005B |
WillSEMI |
Power MOSFET and Schottky Diode |
|
| 6 | WPM2006 |
WillSEMI |
Power MOSFET and Schottky Diode |
|
Desde 2024. D4U Semiconductor.
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