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WPMD2012 |
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| Part Number | WPMD2012 |
| Manufacturer | WillSEMI |
| Description | The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC... |
| Features |
z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363
WPMD2012
Http//:www.willsemi.com
SOT-363
D1 G2 S2 6 54
1 23 S1 G1 D2
Pin configuration (Top view)
6 54
12*
1 23
12 = Device Code * = Month (A~Z)
Marking
Applications
z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift
Order information
Device
Package
Shipping
WPMD2012-6/TR SOT-363 3000/Reel&Tape
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.4
Absolute Maximum ratings
Parameter Drain-S... |
| Document |
 WPMD2012 Data Sheet
PDF 421.15KB |
Desde 2024. D4U Semiconductor.
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