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Weitron Technology |
Enhancement Mode Power MOSFET SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Dr |
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Weitron Technology |
Surface Mount Dual N-Channel MOSFET *Super high dense cell design for low RDS(ON) RDS(ON)<26mΩ @VGS = 10V RDS(ON)<40mΩ @VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Package Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Sour |
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Weitron Technology |
Enhancement Mode Power MOSFET *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain |
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Weitron Technology |
Surface Mount P-Channel Enhancement Mode MOSFET *Super high dense cell design for low RDS(ON) www.DataSheet4U.com R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-S |
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Weitron Technology |
(WTD772 / WTD882) PNP/NPN Epitaxial Planar Transistors B =0 ) Collector Cutoff Current (V CB = -4 0 / 4 0 Vdc, I E =0 ) E m itter Cutoff Current (V E B = -6 . 0 / 6 . 0 V d c, I C =0 ) N OT E : 1 . P W 3 5 0 us , duty cycle 2 % Symbol Min Max -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 Unit Vdc Vdc Vdc |
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Weitron Technology |
Surface Mount P-Channel Enhancement Mode MOSFET *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum Ratings (TA=25 C Unless Otherw |
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Weitron Technology |
Surface Mount N-Channel Enhancement Mode MOSFET *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-So |
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Weitron Technology |
Surface Mount P-Channel Enhancement Mode MOSFET *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain |
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Weitron Technology |
Enhancement Mode Power MOSFET 2 SOURCE 3 1 2 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable Application: *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Volta |
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Weitron Technology |
Enhancement Mode Power MOSFET * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System |
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Weitron Technology |
Enhancement Mode Power MOSFET SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Con tinuous Dra |
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Weitron Technology |
Enhancement Mode Power MOSFET SOURCE 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS=-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Pow |
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Weitron Technology |
Surface Mount N-Channel Enhancement Mode MOSFET *Super high dense cell design for low RDS(ON) www.DataSheet4U.com R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Sourc |
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Weitron Technology |
Surface Mount P-Channel Enhancement Mode POWER MOSFET R DS(ON) <90m Ω @V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package *Super High Dense Cell Design For Low R DS(ON) SOURCE 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Rating |
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Weitron Technology |
(WTD772 / WTD882) PNP/NPN Epitaxial Planar Transistors B =0 ) Collector Cutoff Current (V CB = -4 0 / 4 0 Vdc, I E =0 ) E m itter Cutoff Current (V E B = -6 . 0 / 6 . 0 V d c, I C =0 ) N OT E : 1 . P W 3 5 0 us , duty cycle 2 % Symbol Min Max -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 Unit Vdc Vdc Vdc |
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Weitron Technology |
Surface Mount P-Channel Enhancement Mode POWER MOSFET SOURCE 2 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drai |
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Weitron Technology |
Adjustable Accurate Reference Source The output voltage can be adjusted to 36V Low dynamic output impedance ,its typical value is 0.2Ω Trapping current capability is 1 to 100mA The typical value of the equivalent temperature factor in the whole temperature scope is 50 ppm/℃ The effectiv |
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Weitron Technology |
P-Channel Enhancement Mode Power MOSFET *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powe |
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Weitron Technology |
N-Channel Enhancement Mode Power MOSFET * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V * Capable of 2.5V gate drive * Rugged and Reliable * Lower On-Resistance 2 SOURCE 3 1 2 SOT-23 Application: * Power Management i |
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Weitron Technology |
Surface Mount P-Channel Enhancement Mode POWER MOSFET *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <50m Ω @V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package 1. GATE 2.4 DRAIN 3. SOURCE 2 SOURCE 4 1 2 3 D-PAK / (TO-252) Maximum Rati |
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Desde 2024. D4U Semiconductor.
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