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WT-2306 |
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| Part Number | WT-2306 |
| Manufacturer | Weitron Technology |
| Description | WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT 2.8 AMPERES DRAIN SOURCE V OLTAGE 20 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low R DS(ON) R DS(ON... |
| Features |
*Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package
GATE
3 1 2
SOT-23
www.DataSheet4U.com
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 20 Unite V V A A A W C/W C
+8 2.8 12 1.25 1.25 100 -55 to 150
... |
| Document |
 WT-2306 Data Sheet
PDF 140.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WT-2300 |
Weitron Technology |
Surface Mount N-Channel Enhancement Mode MOSFET |
|
| 2 | WT-2301 |
Weitron Technology |
Surface Mount P-Channel Enhancement Mode MOSFET |
|
| 3 | WT-2307 |
Weitron Technology |
Surface Mount P-Channel Enhancement Mode MOSFET |
|
| 4 | WT-3401 |
Weitron Technology |
Surface Mount P-Channel Enhancement Mode MOSFET |
|
| 5 | WT-3402 |
Weitron Technology |
Surface Mount N-Channel Enhancement Mode MOSFET |
|
| 6 | WT-A521 |
Fujitsu |
(WT-A521 / WT-A522) UHF RFID Tag |
|
| 7 | WT-A522 |
Fujitsu |
(WT-A521 / WT-A522) UHF RFID Tag |
|
| 8 | WT-H-154D240I-CTP |
WillTron |
TFT LCD |
|
| 9 | WT-H-B24M36-4L03G |
WillTron |
TFT LCD |
|
| 10 | WT-H-P156E30-48L01P |
WillTron |
TFT LCD |
|
Desde 2024. D4U Semiconductor.
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