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WTC2312 |
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| Part Number | WTC2312 |
| Manufacturer | Weitron Technology |
| Description | WTC2312 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features: * Super High Dense Cell Design For Low RDS(ON) RD... |
| Features |
* Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V * Capable of 2.5V gate drive * Rugged and Reliable * Lower On-Resistance
2 SOURCE
3 1 2
SOT-23
Application:
* Power Management in Notebook Computer. * Portable Equipment. * Battery Powered System.
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,[email protected](TA=25°C) ,[email protected](TA=70°C) Pulsed Drain Current 1, 2 Total Power Dissipation(TA=25°C) Maximum Junction-ambient 3 Operating Junction Temperature Range Storage Temperature R... |
| Document |
 WTC2312 Data Sheet
PDF 2.37MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WTC2310 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
| 2 | WTC2301 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
| 3 | WTC2301 |
Weitron Technology |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | WTC2302 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
| 5 | WTC2302 |
Weitron Technology |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | WTC2303 |
Weitron Technology |
Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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