| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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United Monolithic Semiconductors |
Flip-Chip Dual Diode ■ High cut-off frequencies : 3THz ■ High breakdown voltage : < -5V @ 20µA ■ Good ideality factor : 1.2 ■ Low parasitic inductances ■ Low cost technology ■ Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Wu Fco n BVak Gate W |
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United Monolithic Semiconductors |
7-20GHz Medium Power Amplifier ■ Broadband performance 7-20GHz ■ Self-biased ■ 23dB gain @ 2.7dB noise figure ■ 20dBm Output power @1dBcp ■ DC power consumption, 175mA @ 4.2V ■ 24L-QFN4X4 SMD package ■ MSL1 UMS A3667A YYWW RFin Vd RFout Main Characteristics Tamb = +25°C, Vd= |
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United Monolithic Semiconductors |
GaAs Monolithic Microwave ■ High power : 32.5dBm ■ High PAE : 38% ■ Frequency band : 8-12GHz ■ Linear gain : 22dB ■ DC bias: Vd=8Volt@Id=350mA ■ Chip size 3x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm |
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United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier ■ Broadband performances: 10-16GHz. ■ 23dB Linear Gain. ■ 26.5dBm output power @ 1dB comp. ■ 36dBm OIP3. ■ DC bias: Vd=5.0Volt@Id=360mA. ■ Chip size 1.81x1.37x0.1mm. Gain and retun losses (dB) RF IN VD1 VD2 VD3 RF OUT VG1 VG2 VG3 30 25 20 S |
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United Monolithic Semiconductors |
GaAs Monolithic Microwave IC ■ Frequency range: 2.7-3.5GHz ■ 5.625°phase shifter step ■ 0-360°phase shift range ■ RMS peak phase error: 1° ■ Digital interface ■ 24L-QFN4x5 ■ MSL1 UMS P4012 YYWW Main Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Ls In |
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United Monolithic Semiconductors |
DC-20GHz Reflective SPDT Switch þ Broadband performance : DC-20GHz þ Low insertion loss : 2.1dB@20GHz þ High isolation : 53dB@1GHz 30dB@20GHz þ Excellent input and output matching: VSWR < 1.5:1 þ Chip size : 1,92 x 1,22 x 0.1mm Main Characteristics Tamb = +25°C Symbol Il Parameter |
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United Monolithic Semiconductors |
36-40GHz Low Noise Amplifier |
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United Monolithic Semiconductors |
36-40GHz Very Low Noise High Gain Amplifier ■ Broadband performances: 36-40GHz ■ 2.5dB Noise Figure ■ 21dB gain ■ ±1.5dB gain flatness ■ Low DC power consumption, 60mA @ 3.5V ■ Chip size: 1.72 X 1.08 X 0.10 mm Typical on wafer measurements 22 4 20 3,5 18 3 16 2,5 14 2 12 1,5 10 1 30 31 32 33 |
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United Monolithic Semiconductors |
17-24GHz High Power Amplifier ■ Performances : 17-24GHz ■ 30dBm output power @ 1dB comp. gain ■ 17 dB ± 1dB gain ■ DC power consumption, 800mA @ 6V ■ Chip size : 4.01 x 2.52 x 0.05 mm Gain & RLoss (dB) 25 20 15 10 5 0 -5 -10 -15 -20 12 Main Characteristics Tamb. = 25°C Symbol |
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United Monolithic Semiconductors |
7.5-30GHz Frequency Multiplier ■ Broadband performance: 6.25-8.25GHz ■ 11dBm Pout @ +12dBm Pin ■ DC power consumption, 75mA @ 3.5V ■ Chip size: 2.02 x 0.89 x 0.10mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ. Max Unit Fin Input frequency range 6.2 |
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United Monolithic Semiconductors |
DC-6GHz 6-BIT DIGITAL ATTENUATOR ■ Broadband performances: DC-6GHz ■ Insertion Loss (state 0): 2.5dB ■ RMS attenuation error: 0.3dB ■ RMS phase variation: 1deg ■ DC bias: V+=5V and V-=-5V ■ No decoupling capacitance on Input and Output RF accesses ■ Chip size 2.41x1.32 |
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United Monolithic Semiconductors |
71-86GHz Single Side Band Mixer ■ Broadband RF performances: 71-86GHz ■ -11dB Conversion Gain ■ 40dB 2LO isolation ■ 10dBm Input Power at 1dB compression ■ DC bias: Vd=3.5V @Id=90mA ■ Chip size 3.43x1.5x0.07mm Conversion Gain (dB) Conversion Gain -5 -6 -7 -8 USB LSB -9 -10 |
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United Monolithic Semiconductors |
6 - 18 GHz High Power Amplifier 0.25 µm Power pHEMT Technology 6 – 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm INPUT A OUTPUT A Vd1 Vd2 |
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United Monolithic Semiconductors |
13-15.5GHz Power Amplifier 36 Output power at 1dB comp. 35 OP1dB (dB) @3 Temperatures ■ Broadband performances: 13-15.5GHz ■ 22dB Linear Gain ■ 32.5dBm output power @1dB comp. ■ 41dBm output TOI ■ 22% PAE@1dB compression ■ DC bias: Vd=7Volt @ Id=1.1A ■ 32L-QFN5x5 34 33 32 3 |
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United Monolithic Semiconductors |
7-12GHz LNA ■ Broadband performances: 7-12GHz ■ Linear gain: 19dB ■ Return Losses: 12dB ■ Noise Figure: 1.2dB ■ Output power @ 1dBcomp: 11dBm ■ DC bias: Vd=4 Volt@Id=45mA ■ Chip size 1.93x1.3x0.1mm 25 5.0 24 4.5 23 4.0 22 3.5 21 20 S21 3.0 2.5 19 2.0 18 |
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United Monolithic Semiconductors |
X-band Medium Power Amplifier 0.25µm Power pHEMT Technology Frequency band: 8-12GHz Output power: 29dBm @ 3dBcomp Linear gain: 25dB High PAE: 39% @ 3dBcomp Noise Factor: 5dB typ. Quiescent bias point: Vd=8V, Id=0.19A Chip size: 2.37x1.82x0.07mm Pout (dBm) & PAE(% |
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United Monolithic Semiconductors |
K Band Mixer ■ 22-24 GHz LO frequency range ■ IF from 1 to 3 GHz ■ Low conversion loss up & down ■ High LO/RF isolation ■ Low LO input power ■ Small chip size: 1.73 x 1.53 x 0.10 mm Typical conversion characteristic (measurement in test fixture) Main Characteri |
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United Monolithic Semiconductors |
GaAs Monolithic Microwave IC ■ 22-24 GHz LO frequency range ■ IF from 1 to 3 GHz ■ Low conversion loss up & down ■ High LO/RF isolation ■ Low LO input power ■ Small chip size: 1.73 x 1.53 x 0.10 mm Typical conversion characteristic (measurement in test fixture) Main Characteri |
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United Monolithic Semiconductors |
K-Band Mixer ■ 36-38 GHz LO frequency range ■ IF from 1 to 3 GHz ■ Low conversion loss up & down ■ High LO/RF isolation ■ Low LO input power ■ Small chip size: 1.53 x 1.53 x 0.10 mm Typical conversion characteristic (measurement in test fixture) Main Characteri |
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United Monolithic Semiconductors |
W-band Mixer -7,5 -10 -12,5 -15 75 75,5 76 76,5 77 77,5 78 LO Frequency (GHz) Typical conversion characteristic LO power = 5dBm ; IF=10MHz (measurement in test fixture) Main Characteristics Tamb. = 25°C Symbol F_LO,F_RF F_IF Lc I_LO/RF N_IF Parameter LO,R |
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Desde 2024. D4U Semiconductor.
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