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DBES105A |
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| Part Number | DBES105A |
| Manufacturer | United Monolithic Semiconductors |
| Description | The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This fli... |
| Features |
■ High cut-off frequencies : 3THz ■ High breakdown voltage : < -5V @ 20µA ■ Good ideality factor : 1.2 ■ Low parasitic inductances ■ Low cost technology ■ Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage Parameter Typ 5 3 1.2 < -5 Unit µm THz V ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSDBES1051067 -08-Mar-01 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départem... |
| Document |
 DBES105A Data Sheet
PDF 58.66KB |
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