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CHA5115-99F |
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| Part Number | CHA5115-99F |
| Manufacturer | United Monolithic Semiconductors |
| Description | The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB ga... |
| Features |
0.25µm Power pHEMT Technology Frequency band: 8-12GHz Output power: 29dBm @ 3dBcomp Linear gain: 25dB High PAE: 39% @ 3dBcomp Noise Factor: 5dB typ. Quiescent bias point: Vd=8V, Id=0.19A Chip size: 2.37x1.82x0.07mm
Pout (dBm) & PAE(%) & Gain(dB)
44 PAE @ 3dB comp 42 40 38 36 34 32 Pout @ 3dB comp 30 28 26 Linear Gain 24 22 20
8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz)
Main Characteristics
Tamb =+25°C, Vd =8V, Id (Quiescent) =190mA, Drain Pulse width =100µs, Duty cycle = 20%
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
8 12 GHz
PAE_P-3d... |
| Document |
 CHA5115-99F Data Sheet
PDF 164.77KB |
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Desde 2024. D4U Semiconductor.
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