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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 2.5 Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R50 |
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N-CHANNEL MOSFET * RDS(ON) ≤ 0.7 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 1 1 Power MOSFET TO-220F1 TO-220F3 TO-263 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Orde |
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N-CHANNEL MOSFET * RDS(ON) < 2.2Ω @ VGS = 10 V, ID = 2.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N60L-TA3- |
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N-CHANNEL POWER MOSFET * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high RuggednessA SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 9 QW-R50 |
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N-CHANNEL MOSFET * RDS(ON) ≤ 0.7 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 1 1 Power MOSFET TO-220F1 TO-220F3 TO-263 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Orde |
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N-Channel Power MOSFET * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 9 QW-R502 |
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N-CHANNEL POWER MOSFET * RDS(ON) < 0.63Ω @ VGS = 10V, ID = 7 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1 TO-220F2 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Fre |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 14N60L-TA3-T 1 |
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650V TRENCH GATE FIELD-STOP IGBT * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.44V @ IC=4.0A, VGE=15V (TC =25°C) SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTG4N65L-TN3-R UTG4N65G-TN3-R Note: Pin Assig |
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600V N-CHANNEL POWER MOSFET * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N60L-TM3- |
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N-CHANNEL POWER MOSFET * RDS(ON) < 2.9Ω @ VGS = 10V, ID = 2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N65L-TF1-T |
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N-CHANNEL POWER MOSFET * RDS(ON) < 0.63Ω @ VGS = 10V, ID = 7 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1 TO-220F2 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Fre |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 14N60L-TA3-T 1 |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 2.6 Ω @ VGS=10V, ID=2.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness Power MOSFET SYMBOL www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-637.E |
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N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.6 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 14N60L-TF1-T 14N60G-TF1 |
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650V N-CHANNEL POWER MOSFET * RDS(ON) ≤ 2.7Ω @ VGS=10V, ID=2.0A * High Switching Speed SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N65L-TM3-T 4N65G-TM3-T 4N65L-TN3-R 4N65G-TN3-R Note: Pin Assignment: G |
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N-CHANNEL MOSFET * RDS(ON) < 0.37Ω @ VGS=10V, ID=12A * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 24N65L-T47-T 24N65G-T47-T Note: Pin Assignment: G |
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N-Channel Power MOSFET * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 9 QW-R502 |
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N-CHANNEL POWER MOSFET 1 * RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain Power MOSFET TO-220F TO-220F1 TO-220F2 1.Gate 3.Source ORDERING INFORMATION Orderin |
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N-CHANNEL MOSFET * RDS(ON) ≤ 0.7 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 1 1 Power MOSFET TO-220F1 TO-220F3 TO-263 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Orde |
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Desde 2024. D4U Semiconductor.
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