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4N60 |
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| Part Number | 4N60 |
| Manufacturer | INCHANGE |
| Description | ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage . |
| Features | Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time ID=4A; VDD=300V; RL=25Ω MIN TYPE MAX UNIT 600 V 2.0 4.0 V 1.4 V 2.5 Ω ±100 nA 10 µA 45 100 13 35 ns 35 80 25 60 NOTICE： ISC reserves the rights to make changes of the content herein the d. |
| Datasheet |
 4N60 Data Sheet
PDF 229.22KB |
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4N60 |
| Part Number | 4N60 |
| Manufacturer | KIA |
| Title | N-CHANNEL MOSFET |
| Description | The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM m. |
| Features | 600V, RDS(ON) =2.1Ω@ VGS=10V Ultra low gate charge (typ Qg=15.5nC) Low Reverse capacitance (typ Crss=8pF) 100% avalanche tested RoHS compliant 3. Pin configuration Pin Function 1 Gate 2 Drain 3 Source 1 of 7 KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 4N60 4. Absolute maximum ratings Parameter Drain-source voltage Drain current Tc=25 ºC Tc=100 ºC Drain current pulsed (note 1) Ga. |
4N60 |
| Part Number | 4N60 |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC . |
| Features | RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N60F) D D G S TO-252 (D-PAK) (4N60G) GDS TO-220AB (4N60A) GDS TO-220F (4N60AF) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 4 600 2.5 @. |
4N60 |
| Part Number | 4N60 |
| Manufacturer | UTC |
| Title | N-CHANNEL POWER MOSFET |
| Description | The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies. |
| Features | * RDS(ON) ≤ 2.5 Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-061.AB 4N60 Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N60L-TA3-T 4N60G-TA3-T TO-220 4N60L-TF1-T. |
4N60 |
| Part Number | 4N60 |
| Manufacturer | ROUM |
| Title | 4A 600V N-channel Enhancement Mode Power MOSFET |
| Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 2.1Ω ID = 4A 2 Features ● Fast Switching ● ESD Im. |
| Features |
● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤2.5Ω) ● Low Gate Charge(Typical Data:14.5nC) ● Low Reverse Transfer Capacitances(Typical:4pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and. |
4N60 |
| Part Number | 4N60 |
| Manufacturer | WEITRON |
| Title | Surface Mount N-Channel Power MOSFET |
| Description | The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies. |
| Features | 2 DRAIN * * RDS(ON) =2.5 Ohms @VGS Ultra low gate charge =10V * Low reverse transfer Capacitance 1 GATE * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 3 SOURCE DRAIN CURRENT 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE D-PAK3/(TO-251) D-PAK/(TO-252) TO-220 TO-220F Maximum Ratings(T A=25 C Unless Otherwise Specified) Rating Symbol . |
4N60 |
| Part Number | 4N60 |
| Manufacturer | Zibo Seno |
| Title | Power MOSFET |
| Description | 4N60 4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM mot. |
| Features | * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness SYMBOL 2.Drain 4N60 4N65 Power MOSFET 1 1 TO-220 ITO-220/TO-220F 1 TO-251/IPAK 1 TO-252/DPAK 1.Gate 3.Source ORDERING INFORMATION Ordering Number Packag. |
4N60 |
| Part Number | 4N60 |
| Manufacturer | HAOHAI |
| Title | N-Channel MOSFET |
| Description | 4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs 5000Pcs ■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excel. |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 15nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V 100% Avalanche Tested Package: TO-220AB & TO-220F
ID=4A BVDSS=600V RDS(on)=2.0Ω
■ 、、、、、RoHS ■ 、LCD、LED、、UPS、 、、、、、、 、、 ■ TO-. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 4N60-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
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| 2 | 4N60-CB |
UTC |
N-CHANNEL MOSFET |
|
| 3 | 4N60-E |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | 4N60-N |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | 4N60-Q |
UTC |
N-CHANNEL POWER MOSFET |
|
| 6 | 4N60-R |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 7 | 4N60-S |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 8 | 4N60-TA5 |
UTC |
600V N-CHANNEL POWER MOSFET |
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| 9 | 4N600 |
ETC |
N-Channel MOSFET |
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| 10 | 4N60A |
nELL |
N-Channel Power MOSFET |
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Desde 2024. D4U Semiconductor.
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