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4N60 4A 600V N-channel Enhancement Mode Power MOSFET Datasheet


4N60

ROUM
4N60
Part Number 4N60
Manufacturer ROUM
Title IGBTs N
Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performa...
Features
● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤2.5Ω)
● Low Gate Charge(Typical Data:14.5nC)
● Low Reverse Transfer Capacitances(Typical:4pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications
● used in various power switching circ...

Document Datasheet 4N60 datasheet pdf (1.28MB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 10666 In Stock
Price
1 units: 0.67 USD
10 units: 0.576 USD
100 units: 0.4 USD
500 units: 0.334 USD
1000 units: 0.313 USD
2500 units: 0.312 USD
BuyNow BuyNow Buy Now (Manufacturer a Infineon Technologies AG IKD04N60RC2ATMA1)



4N60

INCHANGE
4N60
Part Number 4N60
Manufacturer INCHANGE
Title N-Channel Mosfet Transistor
Description ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device perf.
Features Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0.

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4N60

UTC
4N60
Part Number 4N60
Manufacturer UTC
Title N-CHANNEL POWER MOSFET
Description The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-s.
Features * RDS(ON) ≤ 2.5 Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-061.AB 4N60 Power MOSFET  ORDERING INFORMATI.

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4N60

HAOHAI
4N60
Part Number 4N60
Manufacturer HAOHAI
Title N-Channel MOSFET
Description 4A, 600V, N沟道 场效应晶体管 产品参数规格书 工业型号 FQP4N60C FQPF4N60C 公司型号 H4N60P H4N60F 通俗命名 4N60 H HAOHAI 封装标识 P: TO-220AB F: TO-220FP 包装方式 条管装 盒装箱装 每管数量 .
Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge: 15nC(Typ.)  Extended Safe Operating Area  Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V  100% Avalanche Tested  Package: TO.

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4N60

nELL
4N60
Part Number 4N60
Manufacturer nELL
Title N-Channel Power MOSFET
Description The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdow.
Features RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N60F) D D G S TO-252 (D-PAK) (4N60G) GDS TO-220AB.

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4N60

WEITRON
4N60
Part Number 4N60
Manufacturer WEITRON
Title Surface Mount N-Channel Power MOSFET
Description The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-s.
Features 2 DRAIN * * RDS(ON) =2.5 Ohms @VGS Ultra low gate charge =10V * Low reverse transfer Capacitance 1 GATE * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 3 SOURCE DRAIN CURRENT 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE D-PAK3/(TO-251) .

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