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4N60 |
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| Part Number | 4N60 |
| Manufacturer | WEITRON |
| Description | The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara... |
| Features |
2 DRAIN
* *
RDS(ON) =2.5 Ohms @VGS Ultra low gate charge
=10V
* Low reverse transfer Capacitance
1 GATE
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
3 SOURCE
DRAIN CURRENT 4 AMPERES
DRAIN SOURCE VOLTAGE 600 VOLTAGE
D-PAK3/(TO-251)
D-PAK/(TO-252)
TO-220 TO-220F
Maximum Ratings(T A=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage Gate-Source Voltage
VDSS
600 V
VGSS ±30
Avalanche Current - (Note 1)
Continuous Drain Current @ TC=25˚C @ TC=100˚C
Pulsed Drain Current, TP Limited by TJMAX - (N... |
| Document |
 4N60 Data Sheet
PDF 713.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 4N60 |
ROUM |
4A 600V N-channel Enhancement Mode Power MOSFET |
|
| 2 | 4N60 |
Zibo Seno |
Power MOSFET |
|
| 3 | 4N60 |
KIA |
N-CHANNEL MOSFET |
|
| 4 | 4N60 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 5 | 4N60 |
nELL |
N-Channel Power MOSFET |
|
| 6 | 4N60 |
INCHANGE |
N-Channel Mosfet Transistor |
|
| 7 | 4N60 |
HAOHAI |
N-Channel MOSFET |
|
| 8 | 4N60-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 9 | 4N60-CB |
UTC |
N-CHANNEL MOSFET |
|
| 10 | 4N60-E |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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