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UTG4N65-S |
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| Part Number | UTG4N65-S |
| Manufacturer | UTC |
| Description | The UTC UTG4N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG4N65-S is suitable for the resonant or soft switching applications. FEATURES * High switching speed * High avalanche ruggedness * Low sa. |
| Features |
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.44V @ IC=4.0A, VGE=15V (TC =25°C) SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTG4N65L-TN3-R UTG4N65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G C E Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-107.a UTG4N65-S Preliminary Insulated Gate Bipolar Transistor ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltag. |
| Datasheet |
 UTG4N65-S Data Sheet
PDF 224.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | UTG40N120FQ-S |
UTC |
1200V TRENCH GATE FIELD-STOP IGBT |
|
| 2 | UTG40N65-S |
UTC |
650V TRENCH GATE FIELD-STOP IGBT |
|
| 3 | UTG10N65-S |
UTC |
650V TRENCH GATE FIELD-STOP IGBT |
|
| 4 | UTG20N65-S |
UTC |
650V TRENCH GATE FIELD-STOP IGBT |
|
| 5 | UTG25N120 |
UTC |
1200V NPT IGBT |
|
| 6 | UTG25N120-G2 |
UTC |
1200V TRENCH GATE FIELD-STOP IGBT |
|
| 7 | UTG25N65-S |
UTC |
650V TRENCH GATE FIELD-STOP IGBT |
|
| 8 | UTG28N65-S |
UTC |
650V TRENCH GATE FIELD-STOP IGBT |
|
| 9 | UTG30N65-S |
UTC |
650V TRENCH GATE FIELD-STOP IGBT |
|
| 10 | UTG50N120-S |
UTC |
1200V TRENCH GATE FIELD-STOP IGBT |
|
Desde 2024. D4U Semiconductor.
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