| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Tuofeng Semiconductor |
NPN Transistor SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.225 W (Tamb=25℃) Collector current ICM: 0.05 Collector-base voltage A V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 |
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Tuofeng Semiconductor |
PNP Transistor ·As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage V |
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Tuofeng Semiconductor |
PNP Transistor Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 Collector-base voltage A V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 1. BASE 2. EMITTE |
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Tuofeng Semiconductor |
NPN Transistor SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 Collector-base voltage A V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0 |
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Desde 2024. D4U Semiconductor.
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