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MMBTH10LT1 |
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| Part Number | MMBTH10LT1 |
| Manufacturer | Tuofeng Semiconductor |
| Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTH10LT1 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.225 W... |
| Features |
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation
PCM: 0.225 W (Tamb=25℃)
Collector current
ICM: 0.05 Collector-base voltage
A
V(BR)CBO: 30 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO
Test conditions
Ic= 100µA, IE=0
Ic= 1 ... |
| Document |
 MMBTH10LT1 Data Sheet
PDF 51.26KB |
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