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| Part Number | MMBTH10LT1 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MMBTH10LT1 |
| Manufacturer | Tuofeng Semiconductor |
| Title | NPN Transistor |
| Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTH10LT1 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.225 W (Tamb=25℃) Collector current ICM: 0.05 Collector-base voltage A V(BR)CBO: 30 V Operating and s. |
| Features | SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.225 W (Tamb=25℃) Collector current ICM: 0.05 Collector-base voltage A V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage C. |
| Part Number | MMBTH10LT1 |
| Manufacturer | WILLAS |
| Title | VHF/UHF Transistors |
| Description | WILLAS FM120-M+ MMBTH10LTT1HRU 1.0A SUVRFHACFE /MUOUHNTFSCTHrOaTTnKYsBiAsRtRoIErRsRECTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free Product Features Package outline • Batch process design, excellent power dissipation offers zbeWtteerdreecvlaerresethlaetatkhaegme actuerrrieanl ot fapn. |
| Features |
Package outline
• Batch process design, excellent power dissipation offers zbeWtteerdreecvlaerresethlaetatkhaegme actuerrrieanl ot fapnrdotdhuecrtmcaolmrepsliiasntacencwei.th RoHS requirements. • LoPwb-pFrroefielepsaucrkfaacgeemisouanvtaeidlaabplpelication in order to • LoopRwtoimHpioSzwepebrrooldaoursdcst,shpfoiagrchpeae. cffkiciniegnccoy.de suffix ”G” • HHigahlocguerrnenfrteceapparobdiluitcyt. |
| Part Number | MMBTH10LT1 |
| Manufacturer | Motorola |
| Title | VHF/UHF Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTH10LT1/D VHF/UHF Transistor MMBTH10LT1 COLLECTOR 3 1 BASE 3 Motorola Preferred Device NPN Silicon 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emi. |
| Features |
(IC = 100 µAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) 1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 — — — — — — — — — — 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit Thermal Clad is a regi. |
similar datasheet
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| 1 | MMBTH10L |
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| 2 | MMBTH10 |
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| 7 | MMBTH10 |
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| 8 | MMBTH10 |
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Desde 2024. D4U Semiconductor.
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