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Toshiba |
TK7A60W (1) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK7A60W |
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Toshiba |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK7P60W |
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Toshiba |
Silicon N-Channel MOSFET (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.62 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK750A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolu |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit 1: Gate |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit 1: Gate |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source T |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 13 nC (typ.) (3) Small output charge: Qoss = 47 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enh |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 13 nC (typ.) (3) Small output charge: Qoss = 47 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enh |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Fast reverse recovery time: trr = 75 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.3 |
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Toshiba Semiconductor |
N-Channel MOSFET ⎯ SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signif |
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Toshiba Semiconductor |
N-Channel MOSFET Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating condition |
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Toshiba |
Silicon N-channel MOSFET |
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Toshiba |
Silicon N-channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.66 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.25 mA) 3. Packaging and Internal Circuit TK7Q65W 1: |
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Toshiba Semiconductor |
TK7A50D d the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please des |
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Toshiba Semiconductor |
N-Channel MOSFET d the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please des |
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Toshiba |
N-Channel MOSFET 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly e |
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Toshiba |
Silicon N-Channel MOSFET (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circ |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating |
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Toshiba Semiconductor |
N-Channel MOSFET ⎯ SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability sign |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 75 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.3 |
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Desde 2024. D4U Semiconductor.
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