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TK7A90E |
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| Part Number | TK7A90E |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
TO-220SIS
Start of commercial production
1
2013-... |
| Document |
 TK7A90E Data Sheet
PDF 226.72KB |
Similar Datasheet
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| 1 | TK7A90E |
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| 2 | TK7A45DA |
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Desde 2024. D4U Semiconductor.
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