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K7A50D |
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| Part Number | K7A50D |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward trans... |
| Features |
d the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channe... |
| Document |
 K7A50D Data Sheet
PDF 195.86KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K7A161800A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 2 | K7A161801A |
Samsung semiconductor |
512K x 36 / 32 & 1M x 18 Synchronous SRAM |
|
| 3 | K7A161830B |
SAMSUNG ELECTRONICS |
512Kx36 & 1Mx18 Synchronous SRAM |
|
| 4 | K7A161831B |
Samsung semiconductor |
18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE |
|
| 5 | K7A163200A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 6 | K7A163200A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
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Desde 2024. D4U Semiconductor.
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