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Toshiba Semiconductor |
UHF Band Mixer s in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe de |
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Toshiba Semiconductor |
Diode Silicon Epitaxial Schottky Barrier Type 1-2S1C JEDEC JEITA TOSHIBA Weight:0.0024g(typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 mA VF = 0.5 V VR = 0.5 V Test Condition Min ⎯ 25 ⎯ ⎯ Typ. 0. |
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Toshiba Semiconductor |
UHF Band Mixer ity data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 1-1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward current Reverse current Capacitance Symb |
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Toshiba Semiconductor |
UHF Band Mixer . reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 1-1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR C |
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Toshiba Semiconductor |
Diode Silicon Epitaxial Schottky Barrier Type rt and estimated failure rate, etc). VESM JEDEC JEITA TOSHIBA 0.5±0.05 V ― ― 1-2S1C Weight:0.0015g(typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 m |
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Desde 2024. D4U Semiconductor.
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