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JDH3D01S |
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| Part Number | JDH3D01S |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Diode Silicon Epitaxial Schottky Barrier Type |
| Features |
1-2S1C
JEDEC JEITA TOSHIBA
Weight:0.0024g(typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 mA VF = 0.5 V VR = 0.5 V Test Condition
Min
⎯ 25 ⎯ ⎯
Typ.
0.25 ⎯ ⎯ 0.6
Max
⎯ ⎯ 25 ⎯
Unit
V mA uA pF
CT
VR ... |
| Document |
 JDH3D01S Data Sheet
PDF 168.84KB |
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Desde 2024. D4U Semiconductor.
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