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JDH3D01FV |
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| Part Number | JDH3D01FV |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Diode Silicon Epitaxial Schottky Barrier Type |
| Features |
rt and estimated failure rate, etc).
VESM
JEDEC JEITA TOSHIBA
0.5±0.05
V
― ― 1-2S1C
Weight:0.0015g(typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 mA VF = 0.5 V VR = 0.5 V Test Condition
Min
⎯ 25 ⎯... |
| Document |
 JDH3D01FV Data Sheet
PDF 181.09KB |
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Desde 2024. D4U Semiconductor.
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