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Toshiba Semiconductor |
Silicon N-Channel MOSFET • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) • High Forward Transfer Admittance - Yfs = 4.0S (Typ.) • Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V • Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ra |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET e JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrea |
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Toshiba Semiconductor |
2SK1359 etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon revi |
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Toshiba |
2SK1363 |
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Toshiba Semiconductor |
TK13A60D nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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Toshiba |
TK13A50D SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi |
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Toshiba Semiconductor |
N-Channel MOSFET ropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 |
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Toshiba |
2SK1348 |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause |
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Toshiba Semiconductor |
TK13A25D (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13A25D TO-220SIS 1: Gate (G) |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) • High Forward Transfer Admittance - Yfs = 4.0S (Typ.) • Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V • Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ra |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshi |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET iability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handboo |
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Toshiba Semiconductor |
2SK1381 it °C / W °C / W Weight: 4.6 g (typ.) Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK1381 Electrical Characte |
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Toshiba Semiconductor |
N-Channel MOSFET titive avalanche energy (Note 3) Channel temperature Storage temperature range (Note 4) (Note 4) GATE DRAIN （HEAT SINK） 3. SOURSE mJ 6.8 JEDEC A mJ °C °C ⎯ ⎯ 2-10W1A JEITA TOSHIBA Weight: 1.07 g (typ.) Thermal Characteristics Characteristics |
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Toshiba |
Silicon N-Channel MOSFET SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13E25D 1: Gate (G) 2: Drain ( |
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Toshiba Semiconductor |
N-Channel MOSFET ge and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Pleas |
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Desde 2024. D4U Semiconductor.
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