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K1381 |
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| Part Number | K1381 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications 4 V gate drive Low drain−source ON resistance High f... |
| Features |
it °C / W °C / W
Weight: 4.6 g (typ.)
Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-09-02
2SK1381
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance www.DataSheet4U.com Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time tf toff Qg Qgs Qgd VDD ≈ 80 ... |
| Document |
 K1381 Data Sheet
PDF 476.96KB |
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