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K1358 |
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| Part Number | K1358 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Dr... |
| Features |
• Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) • High Forward Transfer Admittance - Yfs = 4.0S (Typ.) • Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V • Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Range VDSS VDGR VGSS ID IDP PD 900 900 ±30 9 27 150 Tch 150 Tstg -55 ~ 150 UNIT V V V A W °C °C Thermal Characterist... |
| Document |
 K1358 Data Sheet
PDF 568.20KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K135 |
Hitachi Semiconductor |
2SK135 |
|
| 2 | K1350 |
ETC |
2SK1350 |
|
| 3 | K1351 |
ETC |
2SK1351 |
|
| 4 | K1351VC600 |
IXYS |
Medium Voltage Thyristor |
|
| 5 | K1351VC620 |
IXYS |
Medium Voltage Thyristor |
|
| 6 | K1351VC640 |
IXYS |
Medium Voltage Thyristor |
|
Desde 2024. D4U Semiconductor.
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