| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
TK12A50D mperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute |
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Toshiba Semiconductor |
TK12A60D SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi |
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Toshiba Semiconductor |
TK12A60U y loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curren |
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Toshiba |
TK12A65D (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packa |
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Toshiba |
Silicon N-Channel MOSFET . Superior Cross Modulation Performance . Low Reverse Transfer Capacitance : C rs s =20fF (Typ .) . Low Noise Figure : NF= 1.5dB (Typ. ) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gatel-Source Voltage SYMBOL VDS vgis RATING |
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Toshiba Semiconductor |
N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12A60W |
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Toshiba Semiconductor |
N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packa |
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Toshiba |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA) 3. Packaging and Internal Circuit TK12A80W 1 |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) |
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Toshiba Semiconductor |
N-Channel MOSFET 6 －0.1 123 1. Gate 2. Drain(heat sink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in te |
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Toshiba Semiconductor |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET m ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated fai |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET s. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rat |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted |
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Toshiba Semiconductor |
N-Channel MOSFET t change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropri |
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Toshiba Semiconductor |
N-Channel MOSFET ate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th |
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Toshiba Semiconductor |
N-Channel MOSFET C JEITA TOSHIBA ⎯ SC-67 2-10U1B −55 to 150 Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decre |
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Toshiba Semiconductor |
N-Channel MOSFET mperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute |
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Toshiba Semiconductor |
MOSFETs ht : 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the |
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Desde 2024. D4U Semiconductor.
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