SSM3K124TU |
Part Number | SSM3K124TU |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max)... |
Features |
the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
1
2
3
0.7±0.05
1: Gate 2: Source 3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic Drain –source breakdown voltage Drain cutoff cu... |
Document |
SSM3K124TU Data Sheet
PDF 192.37KB |
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CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category |