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K12A65D |
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| Part Number | K12A65D |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admitta... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK12A65D
1: Gate (G) 2: Drain (D) 3: Source (S)
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 650 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
12 A
Drain current (pulsed)
(Note 1)
IDP
48
... |
| Document |
 K12A65D Data Sheet
PDF 263.17KB |
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Desde 2024. D4U Semiconductor.
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